Development of UV Photodetector using SnO2/AuNPs@SiNWs heterojunction on Si chip
DOI:
https://doi.org/10.62638/ZasMat1263Abstract
In this study, we present the development of a hybrid nanostructure based on silicon nanowires (SiNWs) and tin oxide (SnO2) and Au nanoparticles, which was utilized to develop a UV photodetector. Metal assisted chemical etching (MACE) was used to create SiNWs on p-Si (1 1 1) substrate, while reduction synthesis and co-precipitation techniques were used to create AuNPs and SnO2 nanoparticles, respectively. These AuNPs and SnO2 nanoparticles were then deposited on top of SiNWs. Using an X-ray diffractometer (XRD), UV-Visible spectrophotometer, and scanning electron microscopy (SEM), the synthesized SnO2/AuNPs@SiNWs hybrid nanostructure was examined. The synthesized SnO2 nanoparticles were subjected to TEM examination as well. At room temperature, the UV photocurrent response of SnO2/AuNPs@SiNWs was studied at varying UV light intensities as 1, 1.5, and 2 mW/cm2. The hybrid nanostructure of SnO2/AuNPs@SiNWs was found to have a photocurrent response time to be very fast (1.32 s). As we turned off the UV source, the sensor reached to its initial state in ~0.77 s. The sample was checked continually for three on/off sets of illumination at a regular interval of 60 s. Therefore, the work disclosed here has great promise for the advancement of highly effective miniature UV photodetectors with unique features.
Keywords:
Photodetector, Ultra-violet, Gold Nanoparticles, Silicon Nanowires, Tin oxide, co-precipitation techniquesReferences
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